| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33 pcs
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33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SB834 is a PNP bipolar junction transistor (BJT) housed in a TO-220AB package. This component is specified for a maximum collector-emitter voltage of 60V and a maximum collector current of 3A. It offers a maximum power dissipation of 30W and can operate at temperatures up to 140°C.
With its TO-220AB package, the 2SB834 is suitable for through-hole mounting. The transistor's specifications make it a versatile component for various electronic circuits requiring amplification or switching functions. Its robust design and operating parameters are typical for power transistor applications in industrial and consumer electronics.
Key electrical characteristics include a maximum collector-emitter voltage of 60V and a maximum collector current of 3A. The device is designed to handle up to 30W of power dissipation, making it suitable for moderate power applications. The operating temperature range extends up to 140°C, ensuring reliability in various environmental conditions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The maximum collector current is 3A.
The maximum power dissipation is 30W.
The maximum operating temperature is 140°C.
The 2SB834 is supplied in a TO-220AB package.