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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
81,000 pcs
|
81000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB815-7-TB-E is a PNP bipolar junction transistor (BJT) manufactured by onsemi. Designed for general-purpose switching and amplification, this single transistor offers a collector-emitter breakdown voltage of 15 V, a collector current rating of 700 mA, and a power dissipation of 200 mW. The device provides a DC current gain (hFE) of at least 300 at Ic=50 mA and VCE=2 V, with a low saturation voltage of 80 mV at Ib=10 mA and Ic=100 mA, making it suitable for low-voltage, low-power circuits.
This surface-mount transistor features a transition frequency of 250 MHz, supporting moderate-speed switching and RF applications. The operating junction temperature is rated up to 125°C, allowing use in thermally challenging environments within its power envelope.
Packaged in the industry-standard SOT-23-3 (also designated TO-236-3 or SC-59) footprint, the 2SB815-7-TB-E is offered in a 3-lead surface-mount configuration (supplier device package 3-CP). Its compact outline is ideal for space-constrained PCB designs in consumer electronics, portable devices, and signal conditioning circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.54 | $0.54 |
| 10+ | $0.33 | $0.33 |
| 100+ | $0.21 | $0.21 |
| 500+ | $0.16 | $0.16 |
| 1,000+ | $0.14 | $0.14 |
| 3,000+ | $0.14 | $0.14 |
| 6,000+ | $0.13 | $0.13 |
| 9,000+ | $0.11 | $0.11 |
| 24,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vce) is 15 V.
The collector current (Ic) is rated at 700 mA.
The power dissipation (Pd) is 200 mW.
The device is available in a TO-236-3, SC-59, SOT-23-3 surface-mount package, with supplier device package 3-CP.
The maximum operating temperature is 125°C (TJ).
According to existing data, the part is RoHS3 compliant, but this status is unverified.
The transition frequency (fT) is 250 MHz.