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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NEC 2SB795-L is a PNP bipolar junction transistor (BJT) housed in a TO-126 package. It is rated for a maximum collector-emitter voltage (Vceo) of -80V and a maximum collector current (Ic) of -1.5A. The device offers a maximum power dissipation of 10W and a continuous current gain (hFE) ranging from 4000 to 10000 for the -L variant. Its operating temperature range is -55 to +150°C, making it suitable for various environmental conditions.
This transistor is well-suited for general-purpose amplification and switching tasks in electronic circuits. The TO-126 package is a common through-hole type, facilitating easy integration into PCB designs. The complementary NPN transistor for the 2SB795 series is the 2SD986. Several equivalent and replacement parts are available, including the BD238, BD680, and MJE252 series, offering flexibility in design and sourcing.
Key electrical characteristics include a maximum collector-base voltage of -80V and a maximum emitter-base voltage of -8V. The wide range of current gain (hFE) available across different suffixes (K, L, M) allows for selection based on specific circuit requirements. The 2SB795-L is a reliable component for designers seeking a robust PNP transistor for their applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SB795-L is -80V.
The maximum continuous collector current for the 2SB795-L is -1.5A.
The maximum power dissipation for the 2SB795-L is 10W.
The operating temperature range for the 2SB795-L is -55 to +150°C.
The 2SB795-L transistor is supplied in a TO-126 package.
The current gain (hFE) for the 2SB795-L is between 4000 and 10000.