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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB794-L from NEC is a PNP bipolar junction transistor (BJT) housed in a TO-126 package. This component is characterized by its electrical specifications, including a maximum collector-emitter voltage (Vce) of -60V and a maximum collector-base voltage (VCB) of -60V. It can handle a continuous collector current (Ic) of up to -1.5A and has a collector power dissipation (Pc) rating of 10W.
The DC current gain (hfe) for the 2SB794-L ranges from 4000 to 10000, indicating its amplification capabilities. The operating and storage junction temperature range is from -55°C to +150°C, ensuring reliability across a wide temperature spectrum. The complementary NPN transistor for this device is the 2SD985-L.
This transistor is suitable for applications requiring a PNP type device with moderate power handling and voltage/current capabilities. Its TO-126 package is commonly used for through-hole mounting and offers adequate heat dissipation for its power rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SB794-L is -60V.
The continuous collector current for the 2SB794-L is -1.5A.
The DC current gain (hfe) for the 2SB794-L ranges from 4000 to 10000.
The operating and storage junction temperature range for the 2SB794-L is -55°C to +150°C.
The 2SB794-L is supplied in a TO-126 package.