2SB794

The 2SB794 from NEC is a PNP bipolar junction transistor (BJT) designed for power applications. It utilizes a Darlington configuration, which significantly boosts its DC current gain (hFE), reaching up to 30000 under specific conditions. This high gain makes it suitable for applications where amplification of small base currents is required to control larger collector currents.

The transistor is housed in a TO-126 package, a common form factor for power transistors that allows for efficient heat dissipation. Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of -1.5A. Its low collector saturation voltage (VCEsat) is beneficial for reducing power loss in switching applications.

Applications for the 2SB794 include use in operating circuits without a predriver, such as hammer drivers. The device complements the 2SD985 and 2SD986 NPN transistors, allowing for complementary push-pull configurations in circuit designs. Its specified switching times (turn-on, storage, and fall times) are in the microsecond range, indicating suitability for moderate-speed switching tasks.