| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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239 pcs
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239 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Panasonic 2SB774 is a silicon PNP epitaxial planar transistor suitable for low-frequency amplification applications. It offers a collector-base voltage (V_CBO) of -30V and a collector-emitter voltage (V_CEO) of -25V.
Key electrical characteristics include a maximum collector current (I_C) of -100mA and a peak collector current (I_CP) of -200mA. The device has a collector power dissipation (P_C) of 400mW and a junction temperature (T_j) up to 150°C.
Packaged in a TO-92-B1 configuration, this transistor is designed for through-hole mounting. Its features make it suitable for various general-purpose amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum ratings are -30V for collector-base voltage (V_CBO), -25V for collector-emitter voltage (V_CEO), and -15V for emitter-base voltage (V_EBO).
The 2SB774 is available in a TO-92-B1 through-hole package.
Maximum junction temperature is 150°C, and storage temperature range is -55°C to +150°C.
Continuous collector current is -100mA, with a peak collector current of -200mA.
At VCE = -10V and IC = -2mA, hFE is 210 to 460. At VCE = -2V and IC = -100mA, minimum hFE is 90.
The transition frequency (fT) is typically 150MHz.
Maximum collector power dissipation is 400mW.