2SB772 The KEXIN 2SB772-P is a Bipolar (BJT) Transistor featuring a 30V collector-emitter breakdown voltage and a 3A collector current. It is supplied in a SOT-89 package.
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2SB772

Available from 2 distributors
Mfr Name: UTC
UTC
The KEXIN 2SB772-P is a Bipolar (BJT) Transistor featuring a 30V collector-emitter breakdown voltage and a 3A collector current. It is supplied in a SOT-89 package.
✓ Total Stock: 1,898 pcs
$ Price Range: $0.99

2SB772 Available from 2 distributors

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✓ Non-Authorised
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999 pcs
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899 pcs
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2SB772 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SB772 Description

Short technical summary and product information.

The KEXIN 2SB772-P is a Bipolar Junction Transistor (BJT) designed for various electronic applications. It offers a collector-emitter breakdown voltage (Vceo) of 30V and can handle a continuous collector current (Ic) of up to 3A. The device has a power dissipation rating (Pd) of 500mW.

 

Key electrical characteristics include a DC current gain (hFE) of 160 at 1A and 2V, and a collector-emitter saturation voltage (VCE(sat)) of 500mV at 2A and 200mA. The collector cut-off current (Icbo) is 1uA, and the transition frequency (fT) is 50MHz.

 

This transistor is housed in a SOT-89 package, suitable for surface-mount applications. The RoHS status is reported as RoHS Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.

2SB772 Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: 2SB772 Bipolar (BJT)
Subcategory: Transistors

2SB772 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB772 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB772 Features

  • 30V collector-emitter breakdown voltage.
  • 3A continuous collector current.
  • 500mW power dissipation.
  • 160 DC current gain at 1A, 2V.
  • SOT-89 surface-mount package.

2SB772 Applications

  • Suitable for general-purpose amplification.
  • Used in switching applications.
  • Component in power supply circuits.
  • Applicable in signal processing.

2SB772 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (Vceo) of the 2SB772-P?

The collector-emitter breakdown voltage (Vceo) is 30V.

What is the maximum continuous collector current (Ic) for the 2SB772-P?

The maximum continuous collector current (Ic) is 3A.

What is the power dissipation (Pd) of the 2SB772-P?

The power dissipation (Pd) is 500mW.

What is the DC current gain (hFE) of the 2SB772-P?

The DC current gain (hFE) is 160 at 1A, 2V.

What is the package type for the 2SB772-P?

The package type is SOT-89.

Is the 2SB772-P RoHS compliant?

The RoHS status is RoHS Compliant.

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