| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
999 pcs
|
999 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
899 pcs
|
899 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The KEXIN 2SB772-P is a Bipolar Junction Transistor (BJT) designed for various electronic applications. It offers a collector-emitter breakdown voltage (Vceo) of 30V and can handle a continuous collector current (Ic) of up to 3A. The device has a power dissipation rating (Pd) of 500mW.
Key electrical characteristics include a DC current gain (hFE) of 160 at 1A and 2V, and a collector-emitter saturation voltage (VCE(sat)) of 500mV at 2A and 200mA. The collector cut-off current (Icbo) is 1uA, and the transition frequency (fT) is 50MHz.
This transistor is housed in a SOT-89 package, suitable for surface-mount applications. The RoHS status is reported as RoHS Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 30V.
The maximum continuous collector current (Ic) is 3A.
The power dissipation (Pd) is 500mW.
The DC current gain (hFE) is 160 at 1A, 2V.
The package type is SOT-89.
The RoHS status is RoHS Compliant.