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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB761 from Panasonic Electronic Components is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification applications. It features a collector-emitter breakdown voltage (VCEO) of -60V minimum and is housed in a TO-220C package, suitable for through-hole mounting.
Key electrical characteristics include a typical collector-emitter saturation voltage (VCEsat) of -1.2V at IC=-3A and IB=-0.375A. The transistor exhibits good linearity of hFE and a wide area of safe operation, making it reliable for various circuit designs. It is a complement to the 2SD856 type transistor.
This component is particularly suited for audio frequency power amplifier applications. Its robust device performance is supported by minimum lot-to-lot variations. The TO-220C package facilitates efficient heat dissipation, crucial for power applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) for the 2SB761 is -60V.
The 2SB761 transistor is supplied in a TO-220C package.
The 2SB761 transistor is primarily used for audio frequency power amplifier applications.
The RoHS status for the 2SB761 is RoHS3 Compliant.