| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB753-Y from Toshiba is a PNP bipolar junction transistor (BJT) housed in a TO-3P package. This component is characterized by its electrical specifications, including a maximum collector-emitter voltage (Vce) of -80V and a maximum collector-base voltage (Vcb) of -100V. It can handle a continuous collector current (Ic) of up to -7A and has a power dissipation rating (Pc) of 40W.
The transistor exhibits a DC current gain (hfe) ranging from 70 to 240, with specific ranges for different suffixes (e.g., -Y). Its transition frequency (ft) is a minimum of 10MHz. The operating and storage junction temperature range is from -55°C to +150°C.
This transistor is suitable for various amplification and switching applications in electronic circuits. Its complementary NPN transistor is the 2SD843. Several other part numbers can serve as replacements or equivalents for the 2SB753-Y.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the 2SB753-Y is -80V.
The continuous collector current rating for the 2SB753-Y is -7A.
The power dissipation for the 2SB753-Y transistor is 40W.
The DC current gain (hfe) for the 2SB753-Y ranges from 70 to 240.
The operating and storage junction temperature range for the 2SB753-Y is -55°C to +150°C.
The 2SB753-Y is supplied in a TO-3P package.