| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SB703 is a SILICON POWER TRANSISTOR manufactured by NEC. This component is designed for power applications, offering a maximum collector current of 4A and a collector emitter voltage of up to 80V.
Key electrical specifications include a maximum power dissipation of 40W and a collector emitter saturation voltage of 2V. The maximum operating temperature is rated at 150°C, ensuring reliability in demanding environments.
This transistor is categorized under Transistors - Bipolar (BJT) - Single, Pre-Biased. It is RoHS3 Compliant, indicating adherence to environmental standards. Further details on its specifications and applications can be found in its datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SB703 transistor is 4A.
The maximum collector emitter voltage for the 2SB703 is 80V.
The maximum power dissipation for the 2SB703 transistor is 40W.
The maximum operating temperature for the 2SB703 is 150°C.
The 2SB703 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SB703 is 1 Unlimited.