Mfr Part #:

2SB649

Mfr Name: JCET

The JCET 2SB649 is a PNP Silicon Transistor designed for general-purpose applications. It features a maximum collector current of -1.5A and a collector-emitter breakdown voltage up to -160V.

✓ Total Stock: 1,223 pcs

$ Price Range: $0.99

2SB649 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	1,223 pcs On Request	1223 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2SB649 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	JCET
Junction Temperature	150°C
Mounting Type	Surface Mount
Storage Temperature	-40°C to +150°C

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2SB649 Description

Short technical summary and product information.

The JCET 2SB649 is a PNP bipolar junction transistor (BJT) suitable for low-frequency power amplifier applications. It is designed as a complementary pair with the UTC 2SB669/A.

Key electrical characteristics include a collector-base breakdown voltage of -180V and a collector-emitter breakdown voltage of -120V for the 2SB649 and -160V for the 2SB649A. The device can handle a continuous collector current of up to -1.5A and a peak collector current of -3A. Its DC current gain (hFE) ranges from 60 to 320 depending on the variant and operating conditions.

Available in multiple package types including SOT-89, TO-126, TO-126C, and TO-92, the 2SB649 offers flexibility for various mounting requirements. Thermal considerations include a maximum junction temperature of +150°C and storage temperatures ranging from -40°C to +150°C. Power dissipation varies by package, with a maximum of 1.4W for TO-126/TO-126C and 500mW for SOT-89.

This transistor is suitable for general-purpose applications requiring a reliable PNP power transistor. Its complementary nature with the 2SB669/A makes it useful in push-pull amplifier circuits.

2SB649 Quick Information

Product Type: PNP Silicon Transistor

Canonical Name: 2SB649 PNP Silicon Transistor

Subcategory: PNP

2SB649 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2SB649 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB649 Features

PNP silicon bipolar power transistor.
Complementary pair with 2SB669/A.
Collector-emitter breakdown voltage up to -160V.
Maximum collector current of -1.5A.
Available in SOT-89, TO-126, TO-126C, and TO-92 packages.

2SB649 Applications

Suitable for high-voltage switching circuits
Used in power amplification applications
Ideal for high-voltage signal switching
Applicable in electronic control modules

2SB649 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage for the 2SB649 transistor?

The collector-emitter breakdown voltage (VCEO) for the 2SB649 is -120V, and for the 2SB649A variant, it is -160V.

What is the maximum continuous collector current for the 2SB649?

The maximum continuous collector current (IC) for the 2SB649 is -1.5A.

What packages are available for the 2SB649 transistor?

The 2SB649 is available in SOT-89, TO-126C, TO-126, and TO-92 packages.

What is the typical current gain bandwidth product of the 2SB649?

The typical current gain bandwidth product (fT) for the 2SB649 is 140MHz.

What is the maximum operating junction temperature for the 2SB649?

The maximum operating junction temperature (TJ) for the 2SB649 is +150°C.