2SB642 The Panasonic 2SB642 is a Silicon PNP epitaxial planar type transistor designed for low-power general amplification. It features a high forward current transfer ratio (hFE) and an M type package for easy insertion.
Mfr Part #:

2SB642

Available from 1 distributors
Mfr Name: Panasonic Electronic Components
Panasonic Electronic Components
The Panasonic 2SB642 is a Silicon PNP epitaxial planar type transistor designed for low-power general amplification. It features a high forward current transfer ratio (hFE) and an M type package for easy insertion.
✓ Total Stock: 11 pcs
$ Price Range: $0.99

2SB642 Available from 1 distributor

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✓ Non-Authorised
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2SB642 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Junction Temperature
Mounting Type
Storage Temperature

2SB642 Description

Short technical summary and product information.

The 2SB642 from Panasonic is a Silicon PNP epitaxial planar transistor suitable for low-power general amplification applications. It offers a high forward current transfer ratio (hFE), with ranks ranging from 160 to 460 depending on the classification (Q, R, S).

 

Key electrical characteristics include a collector-to-base voltage (VCBO) of -60V and a collector-to-emitter voltage (VCEO) of -50V. The continuous collector current (IC) is rated at -100mA, with a peak collector current (ICP) of -200mA. The device can dissipate up to 400mW of power at 25°C ambient temperature.

 

The transistor is housed in an M type mold package (EIAJ: SC-71), designed for easy automatic and manual insertion onto printed circuit boards, as well as stand-alone fixing. The operating junction temperature is up to 150°C, with a storage temperature range of -55°C to +150°C.

2SB642 Quick Information

Product Type: Transistor
Canonical Name: 2SB642 Silicon PNP Epitaxial Planar Transistor
Subcategory: PNP Epitaxial Planar

2SB642 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB642 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB642 Features

  • PNP Epitaxial Planar Transistor type.
  • High forward current transfer ratio hFE.
  • Collector-Emitter Voltage (VCEO) of -50V.
  • Continuous Collector Current (IC) of -100mA.
  • M Type Mold Package for easy insertion.

2SB642 Applications

  • Used in high-voltage switching circuits
  • Suitable for RF amplification applications
  • Ideal for driver circuits in electronic systems
  • Applicable in signal amplification and switching

2SB642 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-to-emitter voltage for the 2SB642?

-50V

What is the continuous collector current rating for the 2SB642?

-100mA

What is the maximum power dissipation for the 2SB642 at 25°C?

400mW

What type of package does the 2SB642 use?

M Type Mold Package

What is the operating junction temperature range for the 2SB642?

150°C

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