| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The 2SB642 from Panasonic is a Silicon PNP epitaxial planar transistor suitable for low-power general amplification applications. It offers a high forward current transfer ratio (hFE), with ranks ranging from 160 to 460 depending on the classification (Q, R, S).
Key electrical characteristics include a collector-to-base voltage (VCBO) of -60V and a collector-to-emitter voltage (VCEO) of -50V. The continuous collector current (IC) is rated at -100mA, with a peak collector current (ICP) of -200mA. The device can dissipate up to 400mW of power at 25°C ambient temperature.
The transistor is housed in an M type mold package (EIAJ: SC-71), designed for easy automatic and manual insertion onto printed circuit boards, as well as stand-alone fixing. The operating junction temperature is up to 150°C, with a storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-50V
-100mA
400mW
M Type Mold Package
150°C