| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB555 is a silicon PNP power transistor manufactured by Toshiba, designed for high-power amplification and audio frequency applications. It comes in a TO-3 package, facilitating high power dissipation up to 100W and junction temperatures up to 150°C. Its key electrical characteristics include a collector-emitter voltage of -140V, a collector current of -12A, and a transition frequency of 6 MHz. The device is suitable for use in power amplifier output stages, high-fidelity audio equipment, and other high-power electronic circuits. Its robust package and electrical specifications make it a reliable choice for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is -140V.
The 2SB555 comes in a TO-3 package.
Yes, the 2SB555 is RoHS3 compliant.
The maximum collector current is -12A.