| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB458 from Mitsubishi Electric is a P-N-P bipolar junction transistor designed for various electronic applications. It offers a maximum collector-emitter voltage (Vce) of 32V and a maximum continuous collector current (Ic) of 1A. The device has a maximum power dissipation (Pmax) of 0.8W and a DC current gain (hFE) of 65.
This transistor is suitable for general-purpose amplification and switching applications where its specific voltage and current ratings are beneficial. The P-N-P configuration allows for specific circuit designs requiring this type of semiconductor.
Further details regarding package type, operating temperature, and frequency characteristics would typically be found in a comprehensive datasheet. However, based on available data, the 2SB458 is identified as a reliable component for electronic circuit design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (Ic Max) for the 2SB458 is 1.000 A.
The maximum power dissipation (Pmax) for the 2SB458 is 0.800 W.
The maximum voltage rating (Vmax) for the 2SB458 is 32 V.
The DC current gain (hFE) of the 2SB458 is 65.
The RoHS status for the 2SB458 is RoHS3 Compliant.