| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB457A from Mitsubishi Electric is a P-N-P bipolar junction transistor. It is suitable for various electronic applications requiring a through-hole component.
Key electrical specifications include a maximum collector-emitter voltage (Vmax) of 32V and a maximum continuous collector current (Ic Max) of 0.5A. The maximum power dissipation (Pmax) is rated at 0.15W, and it offers a minimum DC current gain (hFE) of 110.
This transistor is designed for through-hole mounting, making it suitable for breadboarding and traditional PCB assembly. Its specifications suggest use in general-purpose amplification and switching circuits where moderate voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage (Vmax) for the 2SB457A transistor is 32V.
The maximum collector current (Ic Max) for the 2SB457A is 0.5A.
The maximum power dissipation (Pmax) for the 2SB457A transistor is 0.15W.
The minimum DC current gain (hFE) for the 2SB457A is 110.
The 2SB457A transistor uses through-hole mounting.