LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SB440 is a PNP Germanium transistor designed for various electronic applications. It comes in a TO1 case and is suitable for through-hole mounting.
Key electrical specifications include a maximum collector-base voltage (Vcb) of 30V and a maximum emitter-base voltage (Veb) of 12V. The maximum collector current (Ic max) is 150mA, with a collector current leakage (Icbo) of 14µA at maximum Vcb. The maximum power dissipation (Pd) is 150mW.
This transistor operates within a maximum junction temperature of 75°C. Its forward current transfer ratio (hFE) has a minimum value of 70, and its transition frequency (ft) is a minimum of 0.8 MHz. The collector capacitance (Cc) is typically 50 pF.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status, though these are currently unverified.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (Vcb) for the 2SB440 is 30V.
The maximum collector current (Ic max) for the 2SB440 is 150mA.
The maximum operating junction temperature for the 2SB440 is 75°C.
The 2SB440 transistor comes in a TO1 case.
No, the 2SB440 is not a surface-mounted device; it is designed for through-hole mounting.
The minimum forward current transfer ratio (hFE) for the 2SB440 is 70.
