| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SB426 is a P-N-P bipolar junction transistor designed for various electronic applications. It offers a maximum collector-emitter voltage (Vmax) of 32V and a maximum continuous collector current (Ic Max) of 3A. The device has a maximum power dissipation (Pmax) of 30W.
With a DC current gain (hFE) of 60 and a transition frequency (Ft) of 60MHz, the 2SB426 is suitable for signal amplification and switching tasks. The transistor operates within standard environmental conditions, with a Moisture Sensitivity Level (MSL) of 1.
This component is part of the broader family of discrete semiconductor products, specifically categorized under single, pre-biased bipolar junction transistors. Its specifications make it a versatile choice for engineers designing circuits requiring reliable P-N-P transistor performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum voltage (Vmax) for the 2SB426 transistor is 32V.
The maximum collector current (Ic Max) for the 2SB426 is 3A.
The maximum power dissipation (Pmax) for the 2SB426 is 30W.
The DC current gain (hFE) for the 2SB426 is 60.
The transition frequency (Ft) for the 2SB426 is 60MHz.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.