| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SB425 is a P-N-P bipolar junction transistor designed for various electronic applications. It offers a maximum collector current (Ic Max) of 3A and a maximum collector-emitter voltage (Vmax) of 60V. The device has a maximum power dissipation (Pmax) of 30W and a DC current gain (hFE) of 60.
This transistor is suitable for general-purpose amplification and switching applications where its electrical characteristics meet the design requirements. The component is identified by its part number 2SB425 and is manufactured by Toshiba. It is listed as RoHS3 Compliant, with an MSL of 1, and REACH Unaffected, though these compliance statuses are unverified.
Further details regarding specific operating conditions, frequency response, and package type would typically be found in a detailed datasheet. However, based on the available data, the 2SB425 presents a solid option for designers needing a P-N-P transistor with these specific voltage and current ratings.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic Max) for the 2SB425 transistor is 3A.
The maximum voltage rating (Vmax) for the 2SB425 transistor is 60V.
The maximum power dissipation (Pmax) for the 2SB425 transistor is 30W.
The DC current gain (hFE) of the 2SB425 transistor is 60.