2SB1689T106

The 2SB1689T106 is a PNP bipolar junction transistor manufactured by ROHM Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter voltage rating of 12V and a collector current capability of 1.5A. The device offers a DC current gain (hFE) of at least 270 at Ic=200mA and Vce=2V, and a low collector-emitter saturation voltage of 200mV maximum at Ib=25mA and Ic=500mA, making it suitable for efficient switching circuits.

With a transition frequency (fT) of 400MHz, this transistor supports high-frequency signal processing and fast switching operations. The maximum power dissipation is rated at 200mW, and the junction operating temperature is specified up to 150°C. These characteristics make the 2SB1689T106 appropriate for portable electronics, battery-powered devices, and other space-constrained applications where low power consumption and compact size are important.

The transistor is housed in a surface mount SC-70/SOT-323 package with the supplier device package designation UMT3. This small footprint package is well-suited for automated assembly and high-density PCB layouts. The surface mount configuration enables efficient manufacturing processes and reliable solder connections in volume production environments.

As a single PNP transistor, the 2SB1689T106 can be used in complementary circuit configurations with NPN transistors, load switching, and signal amplification stages. Its combination of moderate voltage and current ratings with high transition frequency provides design flexibility for a range of low-power electronic applications.