| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1626 from Sanken is a Silicon PNP Epitaxial Planar Transistor, serving as the complement to the 2SD2495. It is engineered for applications such as audio amplification, series voltage regulation, and general-purpose switching.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of -110V and a maximum collector current (IC) of -6A. The device offers a minimum DC current gain (hFE) of 5000 at VCE = -4V and IC = -5A. Its maximum power dissipation (PC) is rated at 30W at a case temperature of 25°C.
The transistor is housed in an FM20 (TO-220F) package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +150°C and has a storage temperature range of -55°C to +150°C.
This component is suitable for various electronic designs requiring a robust PNP transistor with moderate power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the 2SB1626 is -110V.
The maximum continuous collector current (Ic) for the 2SB1626 is -6A.
The minimum DC current gain (hFE) for the 2SB1626 is 5000, measured at VCE = -4V and IC = -5A.
The maximum power dissipation (Pc) for the 2SB1626 is 30W at a case temperature of 25°C.
The 2SB1626 transistor is supplied in the FM20 (TO-220F) package.
The operating junction temperature (Tj) for the 2SB1626 is 150°C.