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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,654 pcs
|
7654 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Cut-off Current (ICBO) | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current (IEBO) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Storage Temperature Range (TSTG) | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight | |
| hfe (Minimum/Typical/Maximum @ VCE=-4 V, IC=-7 A) |
The 2SB1560 is a silicon PNP epitaxial planar Darlington transistor from Sanken. It features a high DC current gain (hFE) of 5000 minimum at 7A, making it suitable for high-gain applications.
With a collector-emitter breakdown voltage (VCEO) of -150V and a collector current (IC) rating of -10A, this transistor can handle substantial power. The maximum power dissipation is 100W at a case temperature of 25°C. The DC current gain ranges from 5000 to 30000 depending on the rank (O, P, Y). The collector-emitter saturation voltage is typically -2.5V at 7A.
Designed for audio amplifier output stages and series regulator applications. It has a wide safe operating area (ASO) and is complementary to the NPN type 2SD2390. The transition frequency is 50 MHz typical.
Housed in a TO-3P-3 (SC-65-3) through-hole package, with a weight of 6 grams. The operating junction temperature range is -55°C to 150°C. RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.30 | $5.30 |
| 10+ | $3.52 | $3.52 |
| 100+ | $2.50 | $2.50 |
| 500+ | $2.07 | $2.07 |
| 1,000+ | $1.94 | $1.94 |
| 2,000+ | $1.83 | $1.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (VCEO) is -150V.
The 2SB1560 is available in a TO-3P-3 (SC-65-3) through-hole package.
The maximum operating junction temperature is 150°C, and the storage temperature range is -55°C to 150°C.
Yes, the 2SB1560 is RoHS3 compliant as stated on the manufacturer page.
The 2SB1560 offers three hFE ranks: O (5000-12000), P (6500-20000), and Y (15000-30000) at VCE=-4V, IC=-7A.
The complementary NPN Darlington transistor is the 2SD2390 from Sanken.
The maximum power dissipation is 100W at a case temperature of 25°C.