| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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278 pcs
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278 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1516 from ROHM Semiconductor is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose applications. It features a collector-emitter breakdown voltage (V(BR)CEO) of 80V and a maximum continuous collector current (I(C) Max.) of 3A.
This transistor offers a maximum power dissipation of 10W. The saturation voltage (V(CE)sat) is typically a low 0.3V under specific test conditions (3A collector current, 100mA base current), indicating efficient operation.
The 2SB1516 is supplied in a TO-126 package, suitable for through-hole mounting. Its specifications make it a suitable component for various electronic circuits requiring amplification or switching functions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) for the 2SB1516 is 80V.
The maximum continuous collector current (I(C) Max.) for the 2SB1516 is 3A.
The 2SB1516 has a maximum power dissipation of 10W.
The 2SB1516 is supplied in a TO-126 package.