2SB1516 The ROHM Semiconductor 2SB1516 is a PNP Bipolar Junction Transistor with a breakdown voltage of 80V and a maximum collector current of 3A. It is housed in a TO-126 package.
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2SB1516

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The ROHM Semiconductor 2SB1516 is a PNP Bipolar Junction Transistor with a breakdown voltage of 80V and a maximum collector current of 3A. It is housed in a TO-126 package.
✓ Total Stock: 278 pcs
$ Price Range: $0.99

2SB1516 Available from 1 distributor

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✓ Non-Authorised
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278 pcs
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2SB1516 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SB1516 Description

Short technical summary and product information.

The 2SB1516 from ROHM Semiconductor is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose applications. It features a collector-emitter breakdown voltage (V(BR)CEO) of 80V and a maximum continuous collector current (I(C) Max.) of 3A.

 

This transistor offers a maximum power dissipation of 10W. The saturation voltage (V(CE)sat) is typically a low 0.3V under specific test conditions (3A collector current, 100mA base current), indicating efficient operation.

 

The 2SB1516 is supplied in a TO-126 package, suitable for through-hole mounting. Its specifications make it a suitable component for various electronic circuits requiring amplification or switching functions.

2SB1516 Quick Information

Product Type: PNP Bipolar Junction Transistor
Canonical Name: 2SB1516 PNP Bipolar Junction Transistor
Subcategory: PNP

2SB1516 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB1516 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1516 Features

  • PNP Bipolar Junction Transistor
  • 80V collector-emitter breakdown voltage
  • 3A maximum collector current
  • 10W maximum power dissipation
  • TO-126 through-hole package

2SB1516 Applications

  • Used in high-voltage switching circuits
  • Suitable for power amplification applications
  • Ideal for through-hole PCB mounting
  • Applicable in automotive and industrial electronics

2SB1516 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the 2SB1516 transistor?

The collector-emitter breakdown voltage (V(BR)CEO) for the 2SB1516 is 80V.

What is the maximum continuous collector current for the 2SB1516?

The maximum continuous collector current (I(C) Max.) for the 2SB1516 is 3A.

What is the maximum power dissipation of the 2SB1516 transistor?

The 2SB1516 has a maximum power dissipation of 10W.

What package type is the 2SB1516 transistor supplied in?

The 2SB1516 is supplied in a TO-126 package.

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