| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature |
The Toshiba 2SB1429 is a silicon PNP power transistor offering high current capability and high power dissipation. It is suitable for power amplifier applications, specifically recommended for the output stage of 100W high-fidelity audio frequency amplifiers.
Key electrical characteristics include a collector-emitter breakdown voltage of -180V, a continuous collector current of up to -15A, and a maximum collector power dissipation of 150W at 25℃. The transistor also exhibits a typical DC current gain (hFE) of 55 to 160 at -1A and -5V.
This component is designed for robust performance in demanding audio applications. Its complementary type is the 2SD2155. The operating temperature range is from -55℃ to 150℃.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-180V
-15A
55 to 160
340pF
150°C
RoHS3 Compliant