2SB1427T100E PNP bipolar transistor from ROHM Semiconductor, rated for -20V VCEO and -2A collector current. Features high DC current gain (390-820) and low saturation voltage.
Mfr Part #:

2SB1427T100E

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
PNP bipolar transistor from ROHM Semiconductor, rated for -20V VCEO and -2A collector current. Features high DC current gain (390-820) and low saturation voltage.
Total Stock: 254 pcs
$ Price Range: $0.22 - $1.08

2SB1427T100E Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
234 pcs
234 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
20 pcs
20 pcs On Request 1 On Request On Request On Request On Request On Request

2SB1427T100E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current Pulse (ICP)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Power Dissipation (Maximum @ Each terminal mounted on A reference land)
Power Dissipation (Maximum @ Mounted on ceramic board (40 x 40 x 0.7 mm)
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Transition Frequency (fT)
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1427T100E Description

Short technical summary and product information.

The 2SB1427T100E is a PNP bipolar transistor manufactured by ROHM Semiconductor. It is designed for general purpose amplification and low frequency power amplifier applications. The device features a maximum collector-emitter voltage (VCEO) of -20V and a continuous collector current rating of -2A. It offers a high DC current gain (hFE) ranging from 390 to 820 at VCE=-6V, IC=-500mA, and a low collector-emitter saturation voltage of -500mV maximum at IC=-1A, IB=-50mA. The transition frequency (fT) is typically 150MHz, and the output capacitance (Cob) is 30pF typical. The transistor is housed in a surface mount SOT-89 (MPT3) package with a power dissipation of 0.5W when mounted on a reference land, or 2.0W when mounted on a ceramic board (40x40x0.7mm). It is supplied in tape and reel packaging with 1000 units per reel, suitable for automated assembly processes.

2SB1427T100E Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: 2SB1427T100E PNP Bipolar Transistor
Subcategory: Single

2SB1427T100E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB1427T100E Estimated Pricing

Qty Low High
1+ $1.08 $1.08
10+ $0.68 $0.68
100+ $0.44 $0.44
500+ $0.37 $0.37
1,000+ $0.31 $0.31
2,000+ $0.27 $0.27
5,000+ $0.24 $0.24
10,000+ $0.23 $0.23
25,000+ $0.22 $0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1427T100E Features

  • Rated for -20V collector-emitter voltage.
  • Supports -2A continuous collector current.
  • High DC current gain of 390-820.
  • Low saturation voltage of -500mV max.
  • 150MHz typical transition frequency.

2SB1427T100E Applications

  • Suitable for low frequency power amplifiers.
  • Used in general purpose amplification.
  • Ideal for output stage driver circuits.
  • Can be used in switching applications.

2SB1427T100E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2SB1427T100E?

The maximum collector-emitter voltage (VCEO) is -20V.

What is the package type of the 2SB1427T100E?

It is available in a surface mount SOT-89 (MPT3) package.

What is the operating junction temperature range?

The maximum junction temperature is 150°C. Storage temperature range is -55°C to +150°C.

Is the 2SB1427T100E RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

What is the DC current gain of this transistor?

The DC current gain (hFE) ranges from 390 to 820 at VCE=-6V, IC=-500mA.

What is the saturation voltage?

Maximum collector-emitter saturation voltage is -500mV at IC=-1A, IB=-50mA.

What is the transition frequency?

Typical transition frequency (fT) is 150MHz at VCE=-10V, IE=10mA, f=100MHz.

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