Mfr Part #:

2SB1424T100Q

The ROHM Semiconductor 2SB1424T100Q is a PNP low VCE(sat) bipolar transistor rated for -20V collector-emitter voltage and -3A collector current. It is housed in a surface-mount MPT3 (TO-243AA SC-62) package.

✓ Total Stock: 78,730 pcs

$ Price Range: $0.63 - $0.92

2SB1424T100Q Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	78,730 pcs On Request	78730 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2SB1424T100Q Description

Short technical summary and product information.

The 2SB1424T100Q from ROHM Semiconductor is a PNP silicon epitaxial planar transistor designed for low collector-emitter saturation voltage applications. It features a maximum collector-emitter voltage (VCEO) of -20 V and a maximum collector current of -3 A (DC) or -5 A pulse. The DC current gain (hFE) is specified at 120 to 390 under test conditions VCE=-2V, IC=-0.1A. The transition frequency fT is 240 MHz typical, and output capacitance Cob is 35 pF typical.

The transistor offers a low VCE(sat) of -0.5 V maximum (Ib=-0.1A, Ic=-2A), with typical saturation voltage around -0.2V, making it suitable for high-efficiency switching circuits. The device complements NPN transistors 2SD2150 and 2SC4115S, enabling push-pull or bridge configurations.

Packaged in a surface-mount MPT3 (TO-243AA / SC-62) case, the 2SB1424T100Q is supplied in tape-and-reel packaging (T100) for automated assembly. Maximum power dissipation is 500 mW, and junction temperature range is -55°C to 150°C. The product is marked with abbreviation "AE" on the body. Note that moisture sensitivity level (MSL) is listed as 1 (unlimited), but this has low confidence and should be verified.

2SB1424T100Q Quick Information

Product Type: PNP Bipolar Junction Transistor

Canonical Name: ROHM Semiconductor 2SB1424T100Q PNP Low VCE(sat) Silicon Transistor, -20V VCEO, -3A Ic, 500mW Pd, MPT3

Subcategory: Single BJT

2SB1424T100Q Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

2SB1424T100Q Estimated Pricing

Qty	Low	High
1+	$0.92	$0.92
10+	$0.78	$0.78
100+	$0.63	$0.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1424T100Q Features

Low collector-emitter saturation voltage typ -0.2V.
DC current gain hFE 120-390 at -2V, -0.1A.
Surface mount MPT3 (TO-243AA SC-62) package.
Complement to NPN transistor 2SD2150.
Transition frequency 240 MHz typical.

2SB1424T100Q Applications

Ideal for low-loss switching applications.
Suitable for output drive stages.
Can form complementary pairs with 2SD2150.
Used in general purpose amplification circuits.

2SB1424T100Q FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter breakdown voltage (VCEO) of the 2SB1424T100Q?

Minimum -20 V.

What package type is the 2SB1424T100Q available in?

Surface mount MPT3 (TO-243AA SC-62) package.

What is the maximum junction temperature for the 2SB1424T100Q?

150 °C.

Is the 2SB1424T100Q RoHS compliant?

According to existing distributor data, it is RoHS3 compliant (low confidence, unverified).

What is the DC current gain (hFE) range of the 2SB1424T100Q?

120 to 390 at VCE = -2V, IC = -0.1A.

What is the transition frequency (fT) of the 2SB1424T100Q?

240 MHz typical at VCE = -2V, IE = 0.5A, f = 100MHz.

What is the maximum collector current rating?

-3 A DC; -5 A pulse (single pulse Pw=10ms).

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	ROHM Semiconductor
Current	3 A
DC Current Gain (hFE) (Min) @ Ic, Vce	120
Frequency	240MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power	500 mW
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	MPT3
Tape & Reel	Yes
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage	20 V