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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,600 pcs
|
21600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
685 pcs
|
685 pcs | On Request | 1 | On Request | On Request | 1320+ | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Basic Ordering Quantity (T100) | |
| Basic Ordering Quantity (TL2) | |
| Basic Ordering Quantity (TV2) | |
| Collector Current (Pulse) | |
| Collector Cutoff Current | |
| Collector Emitter Saturation Voltage (Typical/Maximum @ Ib=-100 mA, Ic=-4 A) | |
| Collector Power Dissipation (Maximum @ Tc=25 °C) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum/Maximum @ Ic=-500 mA, Vce=-2 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Junction Temperature | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Taping Code | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1386T100R is a PNP silicon epitaxial planar transistor from ROHM Semiconductor designed for low frequency amplification and switching applications. It features a maximum collector-emitter voltage (VCEO) of -20V and a continuous collector current rating of -5A (pulse current up to -10A). The transistor offers low collector-emitter saturation voltage, typically -0.35V at IC/IB = -4A/-0.1A, and excellent DC current gain characteristics with a minimum hFE of 180 at 500mA.
With a transition frequency of 120 MHz and output capacitance of 60 pF, this device is suitable for medium-power switching and driver circuits. The power dissipation is rated at 2W when mounted on a 40x40x0.7 mm ceramic board (Ta=25°C) and up to 10W at case temperature 25°C. The junction temperature maximum is 150°C.
The transistor is housed in a surface-mount TO-243AA (MPT3) package, making it suitable for compact PCB designs. It is available in tape and reel packaging with multiple taping codes (T100, TL2, TV2) offering quantities of 1000 or 2500 pieces. Complementary NPN transistors include the 2SD2098, 2SD2118, and 2SD2097.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.04 | $1.04 |
| 10+ | $0.65 | $0.65 |
| 100+ | $0.42 | $0.42 |
| 500+ | $0.33 | $0.33 |
| 1,000+ | $0.29 | $0.29 |
| 2,000+ | $0.27 | $0.27 |
| 3,000+ | $0.25 | $0.25 |
| 5,000+ | $0.24 | $0.24 |
| 7,000+ | $0.23 | $0.23 |
| 10,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum VCEO is -20V.
Surface mount TO-243AA (MPT3) package.
Maximum junction temperature is 150°C. Storage temperature range is -55 to 150°C.
It is listed as RoHS3 Compliant, but this is unverified.
Minimum hFE is 180 at Ic=-500mA, Vce=-2V. Full range is 82 to 390.
Maximum VCE(sat) is -1V at Ib=-100mA, Ic=-4A; typical is -0.35V.
Typical transition frequency is 120 MHz at Vce=-6V, Ie=50mA.
Complementary NPN parts are 2SD2098, 2SD2118, and 2SD2097.