2SB1386T100R PNP silicon transistor from ROHM Semiconductor. Rated for -20V VCEO and -5A collector current with low saturation voltage.
Mfr Part #:

2SB1386T100R

Available from 5 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
PNP silicon transistor from ROHM Semiconductor. Rated for -20V VCEO and -5A collector current with low saturation voltage.
Total Stock: 27,290 pcs
$ Price Range: $0.22 - $1.04

2SB1386T100R Available from 5 distributors

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Non-Authorised

2SB1386T100R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Basic Ordering Quantity (T100)
Basic Ordering Quantity (TL2)
Basic Ordering Quantity (TV2)
Collector Current (Pulse)
Collector Cutoff Current
Collector Emitter Saturation Voltage (Typical/Maximum @ Ib=-100 mA, Ic=-4 A)
Collector Power Dissipation (Maximum @ Tc=25 °C)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (Minimum/Maximum @ Ic=-500 mA, Vce=-2 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Emitter-Base Voltage (VEBO)
Frequency
Junction Temperature
Medical Grade
Mounting Type
Operating Temperature
Output Capacitance
Power
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Taping Code
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1386T100R Description

Short technical summary and product information.

The 2SB1386T100R is a PNP silicon epitaxial planar transistor from ROHM Semiconductor designed for low frequency amplification and switching applications. It features a maximum collector-emitter voltage (VCEO) of -20V and a continuous collector current rating of -5A (pulse current up to -10A). The transistor offers low collector-emitter saturation voltage, typically -0.35V at IC/IB = -4A/-0.1A, and excellent DC current gain characteristics with a minimum hFE of 180 at 500mA.

 

With a transition frequency of 120 MHz and output capacitance of 60 pF, this device is suitable for medium-power switching and driver circuits. The power dissipation is rated at 2W when mounted on a 40x40x0.7 mm ceramic board (Ta=25°C) and up to 10W at case temperature 25°C. The junction temperature maximum is 150°C.

 

The transistor is housed in a surface-mount TO-243AA (MPT3) package, making it suitable for compact PCB designs. It is available in tape and reel packaging with multiple taping codes (T100, TL2, TV2) offering quantities of 1000 or 2500 pieces. Complementary NPN transistors include the 2SD2098, 2SD2118, and 2SD2097.

2SB1386T100R Quick Information

Product Type: PNP Bipolar Junction Transistor
Canonical Name: ROHM Semiconductor 2SB1386T100R PNP Silicon Transistor
Subcategory: Bipolar (BJT) - Single

2SB1386T100R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB1386T100R Estimated Pricing

Qty Low High
1+ $1.04 $1.04
10+ $0.65 $0.65
100+ $0.42 $0.42
500+ $0.33 $0.33
1,000+ $0.29 $0.29
2,000+ $0.27 $0.27
3,000+ $0.25 $0.25
5,000+ $0.24 $0.24
7,000+ $0.23 $0.23
10,000+ $0.22 $0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1386T100R Features

  • Low VCE(sat) of -0.35V typical.
  • High DC current gain hFE min 180.
  • Transition frequency of 120 MHz.
  • Surface mount MPT3 package.
  • Complementary NPN transistors available.

2SB1386T100R Applications

  • Ideal for low frequency amplification circuits.
  • Suitable for general purpose switching.
  • Used in output driver stages.
  • Complementary to 2SD2098 NPN transistor.

2SB1386T100R FAQs

8 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

Maximum VCEO is -20V.

What package does the 2SB1386T100R come in?

Surface mount TO-243AA (MPT3) package.

What is the operating temperature range?

Maximum junction temperature is 150°C. Storage temperature range is -55 to 150°C.

Is the 2SB1386T100R RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified.

What is the DC current gain (hFE)?

Minimum hFE is 180 at Ic=-500mA, Vce=-2V. Full range is 82 to 390.

What is the collector-emitter saturation voltage?

Maximum VCE(sat) is -1V at Ib=-100mA, Ic=-4A; typical is -0.35V.

What is the transition frequency?

Typical transition frequency is 120 MHz at Vce=-6V, Ie=50mA.

What are the complementary NPN transistors?

Complementary NPN parts are 2SD2098, 2SD2118, and 2SD2097.

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