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2SB1386T100Q PNP bipolar transistor with -20V collector-emitter breakdown voltage and -5A collector current. Surface mount package MPT3 (TO-243AA).
Mfr Part #:

2SB1386T100Q

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
PNP bipolar transistor with -20V collector-emitter breakdown voltage and -5A collector current. Surface mount package MPT3 (TO-243AA).
Total Stock: 2 pcs
$ Price Range: $0.22 - $1.04

2SB1386T100Q Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2 pcs
2 pcs On Request 1 On Request On Request On Request On Request On Request

2SB1386T100Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Maximum @ Pulse, Pw=10 ms)
Collector Cutoff Current (VCB = -20V)
Collector-Base Breakdown Voltage (IC = -50µA)
Collector-Emitter Breakdown Voltage (IC = -1mA)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum/Maximum @ VCE = -2 V, IC = -0.5 A)
Emitter Cutoff Current (VEB = -5V)
Emitter-Base Breakdown Voltage (IE = -50µA)
Frequency
Medical Grade
Mounting Type
Operating Temperature
Output Capacitance (VCB = -20V, IE = 0A, f = 1MHz)
Power
Power Dissipation (Maximum @ On PCB (1.6 mm thick, Cu plating >=100 mm 2)
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
VCE Saturation Voltage (Typical/Maximum @ IC/IB = -4 A / -0.1 A)
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1386T100Q Description

Short technical summary and product information.

The 2SB1386T100Q is a PNP silicon epitaxial planar transistor from ROHM Semiconductor. It features a low collector-emitter saturation voltage of typically -0.35V at IC/IB = -4A/-0.1A, and excellent DC current gain characteristics. The device is designed for low frequency applications and complements the NPN transistors 2SD2098, 2SD2118, and 2SD2097.

 

Key electrical specifications include a minimum collector-emitter breakdown voltage of -20V, a maximum collector current of -5A DC (10A pulse), and a DC current gain range of 82 to 390 at VCE=-2V, IC=-0.5A. The typical transition frequency is 120MHz. Power dissipation is 2W when mounted on a 40x40x0.7mm ceramic board, or 1W on a standard PCB with sufficient copper area.

 

The transistor is housed in a surface mount MPT3 package (TO-243AA) and is available in tape and reel packaging (T100). Operating junction temperature is up to 150°C, with a storage temperature range of -55°C to 150°C.

2SB1386T100Q Quick Information

Product Type: PNP Bipolar Transistor
Series: 2SB1386
Canonical Name: 2SB1386T100Q PNP Bipolar Transistor
Subcategory: PNP

2SB1386T100Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SB1386T100Q Estimated Pricing

Qty Low High
1+ $1.04 $1.04
10+ $0.65 $0.65
100+ $0.42 $0.42
500+ $0.33 $0.33
1,000+ $0.29 $0.29
2,000+ $0.27 $0.27
3,000+ $0.25 $0.25
5,000+ $0.24 $0.24
7,000+ $0.23 $0.23
10,000+ $0.22 $0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1386T100Q Features

  • Low VCE(sat) of -0.35V typical.
  • DC current gain range 82 to 390.
  • Surface mount MPT3 (TO-243AA) package.
  • Complementary NPN transistors 2SD2098/2SD2118/2SD2097.
  • Operating temperature up to 150°C.

2SB1386T100Q Applications

  • Designed for low frequency applications.
  • Suitable for switching and amplification.
  • Used in power management circuits.
  • Complementary pair with NPN transistors.

2SB1386T100Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

-20V minimum.

What is the package type?

Surface mount TO-243AA (MPT3).

What is the operating junction temperature range?

Maximum junction temperature is 150°C. Storage temperature range is -55°C to 150°C.

Is the 2SB1386T100Q RoHS compliant?

RoHS3 Compliant (unverified).

What is the DC current gain (hFE) range?

82 to 390 at VCE=-2V, IC=-0.5A.

What is the typical collector-emitter saturation voltage?

-0.35V typical at IC/IB=-4A/-0.1A.

What are the complementary NPN transistors?

2SD2098, 2SD2118, and 2SD2097.

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