| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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994 pcs
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994 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The 2SB1382 is a silicon PNP epitaxial planar Darlington transistor from Sanken, complementary to the 2SD2082 NPN type. It is designed for applications such as chopper regulators and DC motor drivers.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 120V, continuous collector current of 16A (26A pulse), and a minimum DC current gain (hFE) of 2000 at 8A collector current and 4V VCE. The collector-emitter saturation voltage (VCE(sat)) is typically 1.5V at 8A, and the transition frequency (fT) is 50 MHz.
The device is housed in a TO-3P-3 Full Pack (TO-3PF) through-hole package, weighing 6.5g. It can dissipate up to 75W at a case temperature of 25°C, with a maximum junction temperature of 150°C and a storage temperature range of -55°C to +150°C.
Typical applications include chopper regulator circuits, DC motor drivers, and general purpose switching where high current gain and robust power handling are required.
The maximum collector-emitter voltage (VCEO) is 120V.
The 2SB1382 is available in a TO-3P-3 Full Pack (TO-3PF) through-hole package.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The 2SB1382 is listed as RoHS3 Compliant, but this status is unverified.
The minimum DC current gain (hFE) is 2000 at 8A collector current and 4V VCE.
The maximum collector-emitter saturation voltage (VCE(sat)) is 1.5V at 8A collector current and 16mA base current.
The complementary NPN Darlington transistor is the 2SD2082.