| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SB1375 is a silicon PNP triple diffused type transistor specifically designed for audio frequency power amplifier applications. It features a low saturation voltage (VCE(sat)) of -1.5V maximum at a collector current of -2A and base current of -0.2A, making it efficient for amplification circuits.
With a high power dissipation capability of 25W at Tc=25°C, the 2SB1375 is suitable for demanding audio applications. The collector metal fin is covered with a mold region for enhanced thermal management. This transistor is complementary to the 2SD2012 NPN type, allowing for push-pull amplifier designs.
The device operates within a collector-emitter voltage (VCEO) of -60V and a collector current (IC) of -3A maximum. Its DC current gain (hFE) ranges from 100 to 320 at VCE=-5V and IC=-0.5A. The transistor is housed in a 2-10R1A package suitable for through-hole mounting.
Key electrical characteristics include a transition frequency (fT) of 9MHz and a collector output capacitance (Cob) of 50pF at 1MHz. The operating temperature range is from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60V
3A
25W
100
-1.5V
-55 to 150°C
2-10R1A