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2SB1284 The 2SB1284 is a Silicon PNP Darlington Power Transistor from Inchange Semiconductor. It features a high DC current gain and is designed for high power switching applications.
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2SB1284

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Mfr Name: SHI
SHI
The 2SB1284 is a Silicon PNP Darlington Power Transistor from Inchange Semiconductor. It features a high DC current gain and is designed for high power switching applications.
✓ Total Stock: 5,381 pcs
$ Price Range: $0.99

2SB1284 Available from 1 distributor

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2SB1284 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SB1284 Description

Short technical summary and product information.

The 2SB1284 is a Silicon PNP Darlington Power Transistor manufactured by Inchange Semiconductor. This component is designed for high power switching applications, offering a high DC current gain of 1500 (Min.) at an IC of -5A. It also features a collector-emitter sustaining voltage (VCEO(SUS)) of -100V (Min.) and a low collector saturation voltage (VCE(sat)) of -1.5V (Max) at IC = -5A.

 

This transistor is suitable for applications such as hammer drive and pulse motor drive. Its robust specifications make it a reliable choice for demanding power applications.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 1500 at -5A collector current, a minimum collector-emitter sustaining voltage (VCEO(SUS)) of -100V, and a maximum collector saturation voltage (VCE(sat)) of -1.5V at -5A collector current.

2SB1284 Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2SB1284 Silicon PNP Darlington Power Transistor
Subcategory: PNP Darlington Power Transistor

2SB1284 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB1284 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1284 Features

  • High DC current gain of at least 1500.
  • Collector-emitter sustaining voltage of -100V.
  • Low collector saturation voltage of -1.5V.
  • Suitable for high power switching applications.
  • Designed as a Silicon PNP Darlingtion Power Transistor.

2SB1284 Applications

  • Suitable for high power switching applications.
  • Ideal for pulse motor drive circuits.
  • Used in hammer drive systems.
  • Applicable in high current switching environments.

2SB1284 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the minimum DC current gain (hFE) for the 2SB1284 transistor?

The minimum DC current gain (hFE) for the 2SB1284 transistor is 1500 at an IC of -5A.

What is the collector-emitter sustaining voltage (VCEO(SUS)) of the 2SB1284?

The collector-emitter sustaining voltage (VCEO(SUS)) of the 2SB1284 is -100V (Min.).

What is the maximum collector saturation voltage (VCE(sat)) for the 2SB1284 at -5A?

The maximum collector saturation voltage (VCE(sat)) for the 2SB1284 at an IC of -5A is -1.5V.

What are the primary applications for the 2SB1284 transistor?

The 2SB1284 transistor is suitable for high power switching applications, hammer drive, and pulse motor drive applications.

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