Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,173 pcs
|
1173 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1260T100Q is a PNP bipolar junction transistor from ROHM Semiconductor. It features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A, with a maximum power dissipation of 2W. The transistor offers a minimum DC current gain (hFE) of 120 at 100mA and 3V, and a maximum saturation voltage of 400mV at 500mA collector current. The transition frequency is 100MHz, making it suitable for switching and amplification applications up to moderate frequencies. The device is housed in a surface-mount MPT3 package (TO-243AA) and operates at a junction temperature up to 150°C. It is designed for general-purpose switching and amplifier circuits in various electronic equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.87 | $0.87 |
| 10+ | $0.54 | $0.54 |
| 100+ | $0.35 | $0.35 |
| 500+ | $0.27 | $0.27 |
| 1,000+ | $0.24 | $0.24 |
| 2,000+ | $0.22 | $0.22 |
| 3,000+ | $0.21 | $0.21 |
| 5,000+ | $0.19 | $0.19 |
| 7,000+ | $0.19 | $0.19 |
| 10,000+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
Surface mount MPT3 (TO-243AA).
150°C.
Yes, RoHS3 compliant (unverified).
1A.
Minimum 120 at 100mA, 3V.
100MHz.