| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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17,455 pcs
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17455 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1259 is a PNP Darlington transistor manufactured by Sanken, designed for general-purpose driver applications such as solenoids, relays, and motors. It features a collector-emitter breakdown voltage of -120 V and a maximum collector current of -10 A (pulse rating -15 A). The device offers a high DC current gain (hFE) of 2000 minimum at VCE=-4V and IC=-5A, enabling efficient low-base-current drive.
Electrical characteristics include a maximum collector-emitter saturation voltage of -1.5 V at IC=-5A and IB=-10mA, and a typical transition frequency of 100 MHz. The transistor is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, with a weight of approximately 2.0 g. Maximum power dissipation is 30 W at a case temperature of 25°C, with a junction temperature rating of 150°C.
This device is a complementary type to the NPN Darlington 2SD2081. It is suitable for medium-power switching and amplification circuits where high gain and low saturation voltage are required.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.22 | $1.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) is -120 V at IC=-10mA.
The maximum collector current (IC) is -10 A, with a pulse rating of -15 A.
The 2SB1259 is available in a TO-220-3 Full Pack (TO-220F) through-hole package.
The storage temperature range is -55 to +150 °C, and the maximum junction temperature is 150 °C.
The minimum DC current gain (hFE) is 2000 at VCE=-4V and IC=-5A.
The maximum collector-emitter saturation voltage (VCE(sat)) is -1.5 V at IC=-5A and IB=-10mA.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified and should be confirmed with the manufacturer.