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2SB1216T-E 2SB1216T-E is a PNP bipolar transistor from On Semiconductor. It features a 100V collector-emitter breakdown voltage, 4A continuous collector current, and a through-hole TO-251-3 (TP) package.
Mfr Part #:

2SB1216T-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
2SB1216T-E is a PNP bipolar transistor from On Semiconductor. It features a 100V collector-emitter breakdown voltage, 4A continuous collector current, and a through-hole TO-251-3 (TP) package.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.54

2SB1216T-E Available from 1 distributor

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✓ Non-Authorised
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1,000 pcs
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2SB1216T-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2SB1216T-E Description

Short technical summary and product information.

The 2SB1216T-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplifier applications requiring high current and voltage handling.

 

With a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 4A (8A pulse), this transistor can handle moderate power levels. It features a low collector-emitter saturation voltage of 500mV at 2A/200mA base current, which reduces power dissipation. The DC current gain (hFE) is typically 200 at 500mA, 5V, ensuring good linearity.

 

The transistor offers fast switching with typical turn-on time of 100ns, storage time of 800ns, and fall time of 50ns. It has a gain-bandwidth product of 130MHz, making it suitable for high-speed switching applications.

 

The device is housed in a through-hole TO-251-3 (IPak) package with supplier device package designation TP. It can operate at junction temperatures up to 150°C and has a power dissipation of 1W at 25°C ambient (20W at case temperature 25°C). The storage temperature range is -55°C to +150°C.

2SB1216T-E Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Series: 2SB1216
Canonical Name: 2SB1216T-E PNP Bipolar Transistor, 100V, 4A, TO-251-3 (TP)
Subcategory: PNP Transistor

2SB1216T-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SB1216T-E Estimated Pricing

Qty Low High
559+ $0.54 $0.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1216T-E Features

  • 100V collector-emitter breakdown voltage.
  • 4A continuous collector current capacity.
  • Low saturation voltage of 500mV at 2A.
  • 130 MHz gain-bandwidth product for fast switching.
  • Through-hole TO-251-3 (TP) package.

2SB1216T-E Applications

  • Suitable for relay driver circuits.
  • Used in high-speed inverter applications.
  • Ideal for general high current switching.
  • Can be used in converter circuits.

2SB1216T-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2SB1216T-E?

100V.

What is the package type of the 2SB1216T-E?

Through-hole TO-251-3 (IPak, TO-251AA) with supplier device package TP.

What is the maximum junction temperature for the 2SB1216T-E?

150°C.

Is the 2SB1216T-E RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified from the manufacturer.

What is the maximum collector current rating?

4A continuous, 8A pulse.

What is the DC current gain (hFE) of the 2SB1216T-E?

Minimum 200 at Ic=500mA, Vce=5V.

What is the switching speed of the 2SB1216T-E?

Typical turn-on time 100ns, storage time 800ns, fall time 50ns.

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