2SB1216S-TL-E PNP bipolar transistor, 100V collector-emitter voltage, 4A collector current, 20W power dissipation. Surface mount package TP-FA (TO-252).
Mfr Part #:

2SB1216S-TL-E

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor, 100V collector-emitter voltage, 4A collector current, 20W power dissipation. Surface mount package TP-FA (TO-252).
✓ Total Stock: 46,599 pcs
$ Price Range: $0.39 - $1.38

2SB1216S-TL-E Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
46,414 pcs
46414 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
185 pcs
185 pcs On Request 1 On Request On Request On Request On Request On Request

2SB1216S-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1216S-TL-E Description

Short technical summary and product information.

The 2SB1216S-TL-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose high-current switching applications, featuring a maximum collector-emitter voltage of 100V and a continuous collector current rating of 4A. The device offers a DC current gain (hFE) of 140 minimum at 500mA and 5V, and a typical gain-bandwidth product of 130 MHz. Collector-emitter saturation voltage is typically 500mV at 2A collector current and 200mA base current.

 

The transistor is housed in a TP-FA surface mount package, which is equivalent to TO-252-3 (DPak). It has a maximum power dissipation of 20W when the case temperature is maintained at 25°C, and 1W at ambient temperature. The junction temperature can reach up to 150°C. These characteristics make it suitable for relay drivers, high-speed inverters, converters, and other high-current switching circuits.

 

The part is RoHS3 compliant and has an MSL rating of 1 (unlimited). It is available in tape and reel packaging for automated assembly. The 2SB1216S-TL-E is a direct complement to the NPN 2SD1816 series.

2SB1216S-TL-E Quick Information

Product Type: Bipolar Transistor (BJT) - Single
Canonical Name: 2SB1216S-TL-E PNP Bipolar Transistor, 100V, 4A, TP-FA Package
Subcategory: Single PNP

2SB1216S-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SB1216S-TL-E Estimated Pricing

Qty Low High
1+ $1.38 $1.38
10+ $0.87 $0.87
100+ $0.57 $0.57
700+ $0.43 $0.43
1,400+ $0.39 $0.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1216S-TL-E Features

  • PNP bipolar transistor with 100V VCEO rating.
  • Continuous collector current up to 4A.
  • Low collector-emitter saturation voltage of 500mV.
  • Surface mount TP-FA (TO-252) package.
  • RoHS3 compliant and MSL 1 rated.

2SB1216S-TL-E Applications

  • Ideal for relay driver circuits.
  • Used in high-speed inverter designs.
  • Suitable for DC-DC converter applications.
  • General purpose high current switching.

2SB1216S-TL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

100V maximum.

What package does the 2SB1216S-TL-E come in?

TP-FA surface mount package, equivalent to TO-252-3 (DPak).

What is the maximum junction temperature?

150°C.

Is the 2SB1216S-TL-E RoHS compliant?

Yes, it is listed as RoHS3 compliant, though this is unverified.

What is the DC current gain (hFE)?

Minimum 140 at 500mA collector current and 5V collector-emitter voltage.

What is the gain-bandwidth product?

Typical 130 MHz.

What is the maximum power dissipation?

20W at case temperature 25°C, 1W at ambient temperature.

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