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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current Pulse (ICP) | |
| Collector Cutoff Current (ICBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (Vce Sat) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ VCE=5 V, IC=2 A) | |
| DC Current Gain (hFE) (Minimum/Maximum @ VCE=5 V, IC=0.5 A) | |
| Emitter Cutoff Current (Iebo) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Power Dissipation (PC) (Maximum @ Tc=25 °C) | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1215T-H is a PNP bipolar junction transistor from onsemi designed for high-current switching applications. It features a collector-emitter breakdown voltage (VCEO) of 100V and a continuous collector current (IC) rating of 3A, with a pulse current capability of 6A. The DC current gain (hFE) ranges from 140 to 400 at VCE=5V and IC=0.5A, ensuring good linearity for amplifier stages.
This transistor offers low collector-emitter saturation voltage (VCE(sat)) of 200 mV typical and 500 mV maximum at IC=1.5A, which minimizes power loss in switching circuits. The gain-bandwidth product (fT) is 130 MHz, suitable for high-speed inverter and converter designs. The device is halogen free and RoHS3 compliant (unverified).
The 2SB1215T-H is housed in a TO-251-3 (TP) through-hole package, also known as SC-64, with a compact footprint for space-constrained designs. Power dissipation is rated at 1W at 25°C ambient and 20W at case temperature 25°C. The junction temperature can reach up to 150°C, and the storage range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 500+ | $0.41 | $0.41 |
| 2,500+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 100V.
The continuous collector current (IC) is 3A, with a pulse capability of 6A.
It comes in a through-hole TO-251-3 package, also known as TP or SC-64.
The storage temperature range is -55°C to +150°C, and the maximum junction temperature is 150°C.
It is listed as RoHS3 compliant, but this status is unverified. The part is verified halogen free.
At VCE=5V and IC=0.5A, the hFE ranges from 140 to 400. At IC=2A, the minimum hFE is 40.
The typical VCE(sat) is 200 mV, with a maximum of 500 mV at IC=1.5A and IB=0.15A.