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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base-to-Emitter Saturation Voltage (VBE(sat)) | |
| Collector Current (Ic) | |
| Collector Current Pulse (ICP) | |
| Collector Cutoff Current (ICBO) | |
| Collector Emitter Saturation Voltage (Maximum @ IC=-3 A, IB=-60 mA) | |
| Collector to Base Breakdown Voltage (V(BR)CBO) | |
| Collector to Emitter Breakdown Voltage (V(BR)CEO) | |
| Collector-to-Base Voltage (VCBO) | |
| Collector-to-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (Minimum @ VCE=-2 V, IC=500 mA) | |
| DC Current Gain (Minimum @ Vce=2 V, Ic=4 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current (Iebo) | |
| Emitter to Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-to-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Gain-Bandwidth Product (fT) | |
| Junction Temperature (TJ) | |
| Lead Style | |
| Minimum Packing Quantity | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| SVHC Present | |
| Storage Temperature (Tstg) | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1205T-TL-E is a PNP bipolar junction transistor from On Semiconductor, designed for medium-power switching and amplification applications. It features a maximum collector-to-emitter voltage of -20V and a continuous collector current of -5A, with a pulse current capability of -8A. The transistor offers a typical gain-bandwidth product of 320MHz and a minimum DC current gain of 200 at 500mA, 2V (Rank T variant).
This transistor is housed in a surface-mount TP-FA package (TO-252-3, SC-63) with gull wing leads and a tab for heat dissipation. It has a maximum power dissipation of 10W at case temperature 25°C and 1W at ambient temperature. The junction temperature rating is 150°C, and the storage temperature range is -55°C to +150°C.
The device utilizes FBET and MBIT processes for low saturation voltage and fast switching speeds. Typical switching times include a turn-on time of 40ns, storage time of 200ns, and fall time of 10ns. The low VCE(sat) of -500mV at 3A makes it suitable for voltage regulators, relay drivers, and lamp drivers.
The 2SB1205T-TL-E is supplied in tape and reel packaging with a minimum quantity of 700 pieces per reel. It is RoHS3 compliant (unverified) and REACH unaffected. The MSL rating is 1 (unlimited, unverified).
The maximum collector-to-emitter voltage (VCEO) is -20V.
It is available in a surface-mount TP-FA package, also known as TO-252-3, DPak (2 Leads + Tab), SC-63.
The maximum junction temperature (Tj) is 150°C.
It is listed as RoHS3 compliant, but this status is unverified.
The typical gain-bandwidth product (fT) is 320 MHz at VCE=-5V, IC=-200mA.
The maximum continuous collector current (IC) is -5A, with pulse capability up to -8A.