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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,445 pcs
|
18445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Collector Current Pulse (ICP) | |
| Collector Cutoff Current (ICBO) | |
| Collector to Base Breakdown Voltage (V(BR)CBO) | |
| Collector to Emitter Breakdown Voltage (V(BR)CEO) | |
| Collector-to-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ VCE=-2 V, IC=-4 A) | |
| Emitter Cutoff Current (Iebo) | |
| Emitter to Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-to-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Junction Temperature (TJ) | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1205T-E is a PNP bipolar junction transistor from ON Semiconductor featuring a collector-emitter voltage rating of -20 V and a continuous collector current rating of -5 A. It is designed for low saturation voltage and fast switching, with a typical gain-bandwidth product of 320 MHz and a DC current gain (hFE) of 200 minimum at 500 mA and 60 minimum at 4 A. The device can dissipate up to 1 W at 25°C ambient and 10 W at 25°C case temperature.
The transistor offers a maximum collector current of -8 A in pulse operation and a base current rating of -0.5 A. Saturation voltage is typically -250 mV at -3 A collector current and -60 mA base current, with a maximum of -500 mV. Switching times are 40 ns turn-on, 200 ns storage, and 10 ns fall time. The collector-to-base, collector-to-emitter, and emitter-to-base breakdown voltages are -25 V, -20 V, and -5 V respectively.
Packaged in a TO-251-3 (TP) through-hole package with short leads, this device is suitable for applications such as flash units, voltage regulators, relay drivers, and lamp drivers. The junction temperature limit is 150°C and storage temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The VCEO rating is -20V.
The maximum continuous collector current is -5A, with -8A for pulse operation.
It comes in a TO-251-3 (TP) through-hole package with short leads.
Maximum junction temperature is 150°C; storage range is -55 to +150°C.
Existing data lists it as RoHS3 compliant, though this is unverified.
Minimum hFE is 200 at 500mA and 2V, and 60 at 4A and 2V.
Datasheet lists flash units, voltage regulators, relay drivers, and lamp drivers.