2SB1205S-E

The 2SB1205S-E is a PNP bipolar junction transistor manufactured by onsemi. It is designed for general-purpose switching and amplification applications requiring medium power and current. The transistor is rated for a maximum collector-emitter voltage (VCEO) of -20 V and a continuous collector current (IC) of -5 A, with a pulse current capability of -8 A. Power dissipation is rated at 1 W at ambient temperature (Ta=25°C) and 10 W at case temperature (Tc=25°C). The DC current gain (hFE) is specified at 140 to 280 for the rank S at Vce=-2 V and Ic=500 mA, with a minimum gain of 60 at Ic=4 A. The transistor exhibits a typical gain-bandwidth product (fT) of 320 MHz and a typical output capacitance of 60 pF.

The device features low collector-emitter saturation voltage (VCE(sat)) of 250 mV typical, 500 mV maximum at Ic=-3 A and IB=-60 mA, contributing to reduced power loss in switching applications. Fast switching times are achieved with typical turn-on time of 40 ns, storage time of 200 ns, and fall time of 10 ns. The 2SB1205S-E is suitable for use in flash circuits, voltage regulators, relay drivers, and lamp drivers.

The transistor is housed in a TO-251-3 (IPak, TO-251AA) through-hole package, also designated as TP package type. The package dimensions are compact, with a standard packing quantity of 500 pieces per bag. The mounting type is through hole, and the part is lead-free (Pb Free) as per the datasheet marking. RoHS compliance is unverified, but the part is lead-free. Moisture sensitivity level is 1 (Unlimited) and REACH status is unaffected, though these are unverified.