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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,300 pcs
|
6300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1204T-TL-E is a PNP bipolar junction transistor (BJT) produced by ON Semiconductor. It is rated for a maximum collector-emitter voltage of 50V, a maximum collector current of 8A, and a maximum power dissipation of 1W. The transition frequency is 130MHz, and the minimum DC current gain (hFE) is 200 at 500mA collector current with 2V collector-emitter voltage.
The transistor is supplied in a TO-252-3 (DPak) surface-mount package, also identified as SC-63, with supplier device package code TP-FA. The surface-mount design enables automated assembly and space-efficient PCB layouts. The maximum junction operating temperature is 150°C, which should be considered in thermal design.
The collector-emitter saturation voltage is specified at 500mV maximum at 4A collector current with 200mA base current. With a collector current rating of 8A and a collector-emitter voltage rating of 50V, this device is suitable for high-current switching and power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.60 | $1.60 |
| 10+ | $1.01 | $1.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 V.
The maximum collector current is 8 A.
The maximum power dissipation is 1 W.
The package is TO-252-3 (DPak, SC-63), with supplier device package code TP-FA, for surface-mount assembly.
The maximum junction operating temperature is 150°C.
The existing database record lists the part as RoHS3 compliant, though this has not been independently verified.
The minimum hFE is 200, measured at Ic=500mA and Vce=2V.