2SB1204T-TL-E The 2SB1204T-TL-E is a surface-mount PNP bipolar transistor from ON Semiconductor. It features 50V collector-emitter voltage, 8A collector current, and 130MHz transition frequency.
Mfr Part #:

2SB1204T-TL-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2SB1204T-TL-E is a surface-mount PNP bipolar transistor from ON Semiconductor. It features 50V collector-emitter voltage, 8A collector current, and 130MHz transition frequency.
Total Stock: 6,300 pcs
$ Price Range: $1.01 - $1.60

2SB1204T-TL-E Available from 1 distributor

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6,300 pcs
6300 pcs On Request 1 On Request On Request On Request On Request On Request

2SB1204T-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1204T-TL-E Description

Short technical summary and product information.

The 2SB1204T-TL-E is a PNP bipolar junction transistor (BJT) produced by ON Semiconductor. It is rated for a maximum collector-emitter voltage of 50V, a maximum collector current of 8A, and a maximum power dissipation of 1W. The transition frequency is 130MHz, and the minimum DC current gain (hFE) is 200 at 500mA collector current with 2V collector-emitter voltage.

 

The transistor is supplied in a TO-252-3 (DPak) surface-mount package, also identified as SC-63, with supplier device package code TP-FA. The surface-mount design enables automated assembly and space-efficient PCB layouts. The maximum junction operating temperature is 150°C, which should be considered in thermal design.

 

The collector-emitter saturation voltage is specified at 500mV maximum at 4A collector current with 200mA base current. With a collector current rating of 8A and a collector-emitter voltage rating of 50V, this device is suitable for high-current switching and power management applications.

2SB1204T-TL-E Quick Information

Product Type: PNP Bipolar (BJT) Transistor
Canonical Name: PNP Bipolar (BJT) Transistor, 50V, 8A, TO-252
Subcategory: Single Transistor

2SB1204T-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SB1204T-TL-E Estimated Pricing

Qty Low High
1+ $1.60 $1.60
10+ $1.01 $1.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1204T-TL-E Features

  • PNP bipolar transistor for high-current switching.
  • 50V collector-emitter voltage rating.
  • 8A maximum collector current capability.
  • 130MHz transition frequency for fast response.
  • Surface mount TO-252 DPak package.

2SB1204T-TL-E Applications

  • High-current load switching up to 8A.
  • Power management in DC-DC converters.
  • Relay and solenoid driver circuits.
  • Linear amplifier output stages.
  • Battery protection and power control.

2SB1204T-TL-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SB1204T-TL-E?

The maximum collector-emitter voltage is 50 V.

What is the maximum collector current rating?

The maximum collector current is 8 A.

What is the maximum power dissipation?

The maximum power dissipation is 1 W.

What package is the 2SB1204T-TL-E available in?

The package is TO-252-3 (DPak, SC-63), with supplier device package code TP-FA, for surface-mount assembly.

What is the maximum junction operating temperature?

The maximum junction operating temperature is 150°C.

Is the 2SB1204T-TL-E RoHS compliant?

The existing database record lists the part as RoHS3 compliant, though this has not been independently verified.

What is the minimum DC current gain (hFE)?

The minimum hFE is 200, measured at Ic=500mA and Vce=2V.

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