| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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894 pcs
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894 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1204S-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 50V, a continuous collector current (IC) rating of 8A, and a power dissipation (Ptot) of 1W. The DC current gain (hFE) has a minimum of 140 at 500mA collector current and 2V VCE. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 500mV at 200mA base current and 4A collector current. The transition frequency (fT) is 130MHz, indicating suitability for high-frequency switching.
The transistor is housed in a TO-251-3 (IPak) through-hole package with short leads, also known as TO-251AA. The supplier device package is designated TP. The operating junction temperature range is up to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited floor life).
This transistor is suitable for use in power management circuits, motor drivers, and other applications where PNP polarity is required. The through-hole mounting allows for easy prototyping and manual assembly. Designers should consider the power dissipation limits and ensure adequate heat sinking for high-current operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.99 | $1.99 |
| 10+ | $1.23 | $1.23 |
| 100+ | $0.81 | $0.81 |
| 500+ | $0.63 | $0.63 |
| 1,000+ | $0.54 | $0.54 |
| 2,000+ | $0.49 | $0.49 |
| 6,000+ | $0.44 | $0.44 |
| 10,000+ | $0.42 | $0.42 |
| 26,000+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 50V.
It is available in a TO-251-3 (IPak, TO-251AA) through-hole package with short leads.
The maximum operating junction temperature is 150°C.
The device is listed as RoHS3 compliant, though this is unverified.
The maximum continuous collector current (IC) is 8A.
The minimum hFE is 140 at 500mA collector current and 2V VCE.
The transition frequency (fT) is 130MHz.