| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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590 pcs
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590 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1203S-TL-E is a PNP bipolar transistor from On Semiconductor designed for high-current switching applications. It delivers a collector-emitter voltage rating of 50V and continuous collector current of 5A, with pulse current capability up to 8A.
This transistor features a low collector-to-emitter saturation voltage of 550mV at 3A base current, ensuring efficient switching. It offers a typical gain-bandwidth product of 180MHz, making it suitable for high-speed inverters and converters. The DC current gain (hFE) is a minimum of 70 at 500mA and 35 at 4A.
The device is housed in a compact surface-mount TP-FA package (TO-252 equivalent), minimizing board space. It is commonly used in relay drivers, high-speed inverters, and general-purpose switching circuits that require high current handling and fast switching.
50 V
TP-FA (TO-252-3, DPak surface mount)
150°C
Listed as RoHS3 compliant (unverified).
Minimum 70 at Vce=2V, Ic=0.5A; minimum 35 at Vce=2V, Ic=4A.
Typical 180 MHz, minimum 130 MHz.
Maximum 550 mV at Ib=150mA, Ic=3A.