2SB1202T-TL-E PNP bipolar junction transistor from ON Semiconductor. Rated for 50V collector-emitter voltage and 3A collector current, in a surface mount TO-252-3 package.
Mfr Part #:

2SB1202T-TL-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar junction transistor from ON Semiconductor. Rated for 50V collector-emitter voltage and 3A collector current, in a surface mount TO-252-3 package.
Total Stock: 700 pcs
$ Price Range: $0.22 - $1.17

2SB1202T-TL-E Available from 1 distributor

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2SB1202T-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1202T-TL-E Description

Short technical summary and product information.

The 2SB1202T-TL-E is a PNP silicon bipolar junction transistor from ON Semiconductor designed for general purpose switching and amplification applications. It features a maximum collector-emitter voltage of 50 V and continuous collector current of 3 A, with a power dissipation limit of 1 W. The device offers a minimum DC current gain (hFE) of 200 at 100 mA / 2 V, ensuring consistent performance in linear operation. Its collector-emitter saturation voltage is typically 700 mV at 2 A collector current, providing low on-state losses. The transition frequency of 150 MHz supports moderate-speed switching circuits.

 

The transistor is housed in a surface mount TO-252-3 package (also known as DPak, SC-63) with a TP-FA supplier device package variant. The maximum junction temperature is 150°C, and it is rated for surface mount assembly, suitable for automated PCB manufacturing. This device is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited floor life). Designed for applications such as load switching, power management, and audio pre-amplification, the 2SB1202T-TL-E offers a balanced combination of voltage, current, and frequency performance.

2SB1202T-TL-E Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Canonical Name: On Semiconductor 2SB1202T-TL-E PNP Transistor, Surface Mount, TO-252-3
Subcategory: Single

2SB1202T-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SB1202T-TL-E Estimated Pricing

Qty Low High
1+ $1.17 $1.17
10+ $0.72 $0.72
100+ $0.47 $0.47
700+ $0.37 $0.37
1,400+ $0.33 $0.33
2,100+ $0.29 $0.29
4,900+ $0.26 $0.26
9,800+ $0.25 $0.25
24,500+ $0.22 $0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1202T-TL-E Features

  • PNP transistor with 50V maximum collector-emitter voltage.
  • 3A continuous collector current capability.
  • Minimum DC current gain of 200 at 100mA.
  • 150 MHz transition frequency for high-speed switching.
  • Surface mount TO-252-3 package for compact designs.

2SB1202T-TL-E Applications

  • Suitable for general purpose switching circuits.
  • Ideal for power management and load switching.
  • Used in audio amplification stages.
  • Applicable in motor driver pre-driver stages.

2SB1202T-TL-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2SB1202T-TL-E?

The maximum collector-emitter voltage is 50 V.

What is the maximum collector current?

The maximum collector current is 3 A.

What package type does this transistor come in?

It is available in TO-252-3, DPak (2 Leads + Tab), SC-63 with a TP-FA supplier package.

What is the maximum junction temperature?

The maximum junction temperature is 150°C.

What is the DC current gain (hFE) specification?

The minimum DC current gain (hFE) is 200 at Ic=100 mA, Vce=2 V.

What is the transition frequency of the 2SB1202T-TL-E?

The typical transition frequency is 150 MHz.

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