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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (VBEsat) (Typical/Maximum) | |
| Collector Current (Pulse) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ Vce=2 V, Ic=3 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) (Typical) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Output Capacitance (Cob) (Typical) | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Storage Temperature | |
| Storage Time (tstg) (Typical) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) (Typical) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1202T-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical ratings include a maximum collector-emitter voltage of -50 V, a continuous collector current of -3 A, and a peak pulse current of -6 A. The device offers a DC current gain (hFE) of 200 minimum at VCE = -2 V and IC = -100 mA, and a typical gain-bandwidth product of 150 MHz. Collector-emitter saturation voltage is typically -0.35 V at IC = -2 A and IB = -100 mA.
The transistor is supplied in a TO-251-3 (IPak) short-lead through-hole package, designated as the TP package by On Semiconductor. It is rated for a maximum power dissipation of 1 W at 25°C ambient and 15 W at 25°C case temperature, with an operating junction temperature range up to 150°C.
| Qty | Low | High |
|---|---|---|
| 937+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is -50 V.
The continuous collector current rating is -3 A.
It uses a TO-251-3 Short Leads, IPak, TO-251AA package (On Semiconductor TP package) with through-hole mounting.
The maximum operating junction temperature is 150 °C, and the storage temperature range is -55 °C to +150 °C.
Yes, the device is RoHS compliant and Pb-Free as stated in the datasheet.
The typical gain-bandwidth product is 150 MHz at VCE = -10 V and IC = -50 mA.
The minimum DC current gain is 200 at VCE = -2 V and IC = -100 mA.