2SB1202T-E PNP bipolar transistor rated for -50 V collector-emitter voltage and -3 A continuous collector current. Housed in a TO-251-3 (IPak) through-hole package.
Mfr Part #:

2SB1202T-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor rated for -50 V collector-emitter voltage and -3 A continuous collector current. Housed in a TO-251-3 (IPak) through-hole package.
Total Stock: 2,000 pcs
$ Price Range: $0.32

2SB1202T-E Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

2SB1202T-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (VBEsat) (Typical/Maximum)
Collector Current (Pulse)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (Minimum @ Vce=2 V, Ic=3 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Fall Time (tf) (Typical)
Frequency
Lead Style
Mounting Type
Number of Pins
Operating Temperature
Output Capacitance (Cob) (Typical)
Power
Power Dissipation (Maximum @ TC=25 °C)
Storage Temperature
Storage Time (tstg) (Typical)
Supplier Device Package
Tape & Reel
Transistor Type
Turn-On Time (ton) (Typical)
Vce Saturation (Max) @ Ib, Ic
Voltage

2SB1202T-E Description

Short technical summary and product information.

The 2SB1202T-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.

 

Key electrical ratings include a maximum collector-emitter voltage of -50 V, a continuous collector current of -3 A, and a peak pulse current of -6 A. The device offers a DC current gain (hFE) of 200 minimum at VCE = -2 V and IC = -100 mA, and a typical gain-bandwidth product of 150 MHz. Collector-emitter saturation voltage is typically -0.35 V at IC = -2 A and IB = -100 mA.

 

The transistor is supplied in a TO-251-3 (IPak) short-lead through-hole package, designated as the TP package by On Semiconductor. It is rated for a maximum power dissipation of 1 W at 25°C ambient and 15 W at 25°C case temperature, with an operating junction temperature range up to 150°C.

2SB1202T-E Quick Information

Product Type: Bipolar Transistor
Canonical Name: 2SB1202T-E PNP Bipolar Transistor
Subcategory: PNP

2SB1202T-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2SB1202T-E Estimated Pricing

Qty Low High
937+ $0.32 $0.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SB1202T-E Features

  • PNP bipolar transistor with -50 V VCEO rating.
  • Continuous collector current rating of -3 A.
  • Typical gain-bandwidth product of 150 MHz.
  • Low collector-emitter saturation voltage of -0.35 V.
  • RoHS compliant and Pb-Free.

2SB1202T-E Applications

  • Used in voltage regulator circuits.
  • Drives relays and solenoids.
  • Suitable for lamp driver applications.
  • General purpose switching and amplification.

2SB1202T-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2SB1202T-E?

The maximum collector-emitter voltage (VCEO) is -50 V.

What is the continuous collector current rating?

The continuous collector current rating is -3 A.

What package type does the 2SB1202T-E use?

It uses a TO-251-3 Short Leads, IPak, TO-251AA package (On Semiconductor TP package) with through-hole mounting.

What is the operating junction temperature range?

The maximum operating junction temperature is 150 °C, and the storage temperature range is -55 °C to +150 °C.

Is the 2SB1202T-E RoHS compliant?

Yes, the device is RoHS compliant and Pb-Free as stated in the datasheet.

What is the typical gain-bandwidth product (fT)?

The typical gain-bandwidth product is 150 MHz at VCE = -10 V and IC = -50 mA.

What is the DC current gain (hFE) at low current?

The minimum DC current gain is 200 at VCE = -2 V and IC = -100 mA.

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