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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Pulse) Max | |
| Collector-Base Breakdown Voltage (VCBO) (Max) | |
| Current | |
| DC Current Gain (Minimum @ Vce=2 V, Ic=3 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (VEBO) (Max) | |
| Fall Time (tf) (Typ) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) (Typ @ VCB=10V, f=1MHz) | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (tstg) (Typ) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) (Typ) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Typical/Maximum @ Ib=100 mA, Ic=2 A) | |
| Voltage |
The 2SB1202S-TL-E is a PNP bipolar junction transistor from On Semiconductor, designed for general purpose switching and amplifier applications. It features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 3A, with a pulse current capability of 6A. The transistor offers low collector-emitter saturation voltage, typically 350mV at 2A, and a high DC current gain minimum of 140 at 100mA. The device is housed in a surface mount TP-FA package (TO-252-3/DPak with 2 leads and tab), making it suitable for compact designs. It is Pb-free and RoHS3 compliant. Applications include voltage regulators, relay drivers, and lamp drivers.
| Qty | Low | High |
|---|---|---|
| 1,400+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
The continuous collector current (IC) is 3A.
It is available in a surface mount TP-FA package, which is equivalent to TO-252-3, DPak (2 leads + tab), SC-63.
The junction temperature maximum is 150°C, and the storage temperature range is -55°C to +150°C.
Yes, the device is RoHS3 compliant and Pb-free.
The minimum hFE is 140 at VCE=2V, IC=100mA, and 35 at VCE=2V, IC=3A.
The typical transition frequency (fT) is 150MHz.