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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current Pulse (ICP) | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature (TJ) | |
| Output Capacitance (Cob) | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Tstg (Maximum) | |
| Tstg (Typical @ See specified Test Circuit) | |
| Turn-On Time (ton) | |
| VCE(sat) (Typical/Maximum @ IC=2 A, IB=100 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ IC=3 A, VCE=2 V) | |
| pc (Maximum @ Tc=25 °C) |
The 2SB1202S-E from On Semiconductor is a PNP bipolar junction transistor designed for medium-power switching and amplification applications. With a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) rating of 3A (6A pulsed), it can handle a variety of load requirements. The transistor offers a low collector-emitter saturation voltage (VCE(sat)) of typically 350mV at 2A, reducing power loss and improving efficiency.
Key electrical characteristics include a DC current gain (hFE) range of 100 to 560 at 100mA, and a minimum gain of 35 at 3A. The gain-bandwidth product (fT) is 150 MHz, making it suitable for moderate-speed switching. Switching times are typical: 70ns turn-on, 650ns storage, and 35ns fall time. The device is housed in a through-hole TO-251-3 (IPak) package, also known as the TP supplier device package, which allows for easy mounting on PCBs. Power dissipation is 1W at 25°C ambient, and 15W at case temperature 25°C.
This transistor is Pb-Free and RoHS3 compliant per the datasheet. It is commonly used in voltage regulators, relay drivers, lamp drivers, and general electrical equipment. The storage temperature range is -55°C to +150°C, with a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.63 | $0.63 |
| 10+ | $0.55 | $0.55 |
| 4,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
It is available in a through-hole TO-251-3 (IPak, TO-251AA) package with supplier device package TP.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
Yes, the datasheet states the device is Pb-Free and RoHS3 Compliant.
The maximum continuous collector current (IC) is 3A, with a pulse current (ICP) rating of 6A.
The typical gain-bandwidth product is 150 MHz at VCE=10V, IC=50mA.
The maximum VCE(sat) is 700mV at IC=2A, IB=100mA; typical value is 350mV.