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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,300 pcs
|
13300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1201T-TL-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications. Key electrical characteristics include a collector-emitter breakdown voltage (Vceo) of 50V, a continuous collector current (Ic) of 2A, and a power dissipation (Pd) of 800mW. The transistor offers a minimum DC current gain (hFE) of 200 at 100mA collector current and 2V Vce, and a maximum collector-emitter saturation voltage of 700mV at 50mA base current and 1A collector current. The transition frequency (ft) is 150MHz, making it suitable for moderate-speed switching circuits.
The device is housed in a surface-mount TO-252-3 package (also known as DPak or SC-63) with a TP-FA supplier device package. It is rated for operation up to a junction temperature of 150°C. The part is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited floor life). This transistor is commonly used in power management, motor control, and audio amplifier output stages. Its surface-mount package enables compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.97 | $0.97 |
| 10+ | $0.61 | $0.61 |
| 100+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
2A.
TO-252-3 (DPak, SC-63).
Maximum junction temperature 150°C.
RoHS3 Compliant (unverified).
Minimum 200 at 100mA, 2V.
150MHz.