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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,500 pcs
|
31500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1201S-TL-E is a PNP bipolar junction transistor from On Semiconductor. It features a collector-emitter breakdown voltage of 50V, a continuous collector current rating of 2A, and a power dissipation of 800mW. The DC current gain (hFE) is minimum 100 at Ic=100mA, Vce=2V, and the collector-emitter saturation voltage is maximum 700mV at Ib=50mA, Ic=1A. The transition frequency is 150 MHz.
This transistor is housed in a surface mount package compatible with TO-252-3, DPak (2 Leads + Tab), and SC-63, with a supplier device package designation of TP-FA. The operating junction temperature range is up to 150°C.
The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 (unlimited). It is designed for general purpose switching and amplification applications where PNP polarity and medium power handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.55 | $1.55 |
| 10+ | $0.93 | $0.93 |
| 100+ | $0.51 | $0.51 |
| 700+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V nominal.
It is a surface mount device available in TO-252-3, DPak (2 Leads + Tab), SC-63, with supplier device package TP-FA.
The maximum junction temperature is 150°C.
Yes, the component is RoHS3 compliant.
The collector current is 2A nominal.
The power dissipation is 800mW.
The minimum hFE is 100 at Ic=100mA, Vce=2V.