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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,201 pcs
|
2201 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1201S-E is a PNP bipolar junction transistor from On Semiconductor. It features a maximum collector-emitter voltage of 50V, a maximum collector current of 2A, and a power dissipation of 800mW. The transistor offers a minimum DC current gain of 140 at 100mA and 2V, and a typical transition frequency of 150MHz. The saturation voltage is 700mV at 50mA base current and 1A collector current. This device is designed for general-purpose switching and amplification applications. The transistor is housed in a surface-mount TO-252-3 (DPak) package with a TP-FA supplier device package. It operates at a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.69 | $0.69 |
| 10+ | $0.61 | $0.61 |
| 100+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum 50V.
Maximum 2A.
Minimum hFE of 140 at 100mA, 2V.
Typical 150MHz.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
150°C (TJ).
RoHS3 compliant according to available data (unverified).