| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,647 pcs
|
7647 pcs | On Request | 1 | On Request | On Request | 1225+ | On Request | On Request | |
|
570 pcs
|
570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SB1188T100Q is a PNP epitaxial planar silicon transistor designed for medium power switching and amplification applications. It offers a collector-base breakdown voltage of -40V, collector-emitter breakdown voltage of -32V, and emitter-base breakdown voltage of -5V. The device supports a DC collector current of -2A and a pulse collector current of -3A.
Key electrical characteristics include a DC current gain (hFE) of 120 to 390 at VCE=-3V and IC=-0.5A, a typical collector-emitter saturation voltage of -0.5V (maximum -0.8V) at IC/IB=-2A/-0.2A, and a transition frequency of 100 MHz. The output capacitance is 50 pF at VCB=-10V. Power dissipation is rated at 0.5W for a single pulse, 2W when mounted on a 40x40x0.7mm ceramic board, and 10W at Tc=25°C.
The transistor operates over a junction temperature range up to 150°C and can be stored from -55°C to 150°C. It is available in the TO-243AA (MPT3) surface mount package with tape and reel packaging. The 2SB1188T100Q complements the 2SD1766, 2SD1758, and 2SD1862 NPN transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.97 | $0.97 |
| 10+ | $0.61 | $0.61 |
| 100+ | $0.47 | $0.47 |
| 500+ | $0.36 | $0.36 |
| 1,000+ | $0.32 | $0.32 |
| 2,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is -32V minimum.
The DC collector current rating is -2A, with a pulse rating of -3A.
The device is available in the TO-243AA (MPT3) surface mount package.
The junction temperature is rated up to 150°C.
The DC current gain ranges from 120 to 390 at VCE=-3V and IC=-0.5A.
The transition frequency is 100 MHz typical at VCE=-5V, IE=0.5A, f=100MHz.
The typical VCE(sat) is -0.5V, with a maximum of -0.8V at IC/IB=-2A/-0.2A.