| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SB1185 is a Silicon PNP Power Transistor manufactured by ROHM Semiconductor. It is designed for use in low frequency power amplifier applications. The transistor comes in a TO-220Fa package.
Key electrical specifications include a collector-emitter voltage of -50V and a collector current of -3A. The maximum power dissipation is rated at 25W at 25C case temperature. The junction temperature can reach up to 150C.
This component offers a collector-emitter saturation voltage of -1.0V at a collector current of -2A and base current of -0.2A. The DC current gain (hFE) ranges from 60 to 320 under specific test conditions. The transition frequency (fT) is 70 MHz.
The storage temperature range for the 2SB1185 is -55C to 150C. Its through-hole mounting type makes it suitable for various circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SB1185 is 3A.
The collector-emitter voltage of the 2SB1185 is -50V.
The maximum power dissipation of the 2SB1185 is 25W at 25C case temperature.
The 2SB1185 transistor comes in a TO-220Fa package.
The operating temperature range for the 2SB1185 is up to 150C.